the s7986-01 and s7987-01 are a family of ft-ccd area image sensors specifically designed for high speed operation. a high fram e rate is attained by employing a wide band width on-chip amplifier. in area scan operation, the s7986-01 and s7987-01 can be used as a h igh frame rate camera, and 2/3-inch ntsc b/w tv correspondence. the s7986-01 and s7987-01 also feature low dark signal (mpp mode operation). t he s7986-01 and s7987-01 have an effective pixel size of 14 14 m and is available in image areas of 9.212 (h) 6.860 (v) mm. one-stage peltier cooler is built into the package for thermoelectric cooling (s7987-01). at room temperature operation, the de vice can be cooled down to -10 ?c (typ.) without using any other cooling technique. in addition, since both the ccd chip and the peltier cooler ar e hermetically sealed, no dry air is required, thus allowing easy handling. features applications image sensor ccd area image sensor back-thinned ft-ccd for low-light-level ntsc b/w tv application s7986-01, s7987-01 selection and order guide type no. cooling number of total pixels number of active pixels active area [mm (h) mm (v)] s7986-01 non-cooled s7987-01 one-stage te-cooled 680 500 658 490 9.212 6.860 general ratings parameter specification ccd structure frame transfer (2/3-inch ntsc b/w tv correspondence) pixel size 14 (h) 14 (v) m vertical clock phase 2-phase horizontal clock phase 2-phase output circuit two-stage mosfet source follower package 24-pin ceramic package window* 1 sapphire *1: temporary window type (ex. s7986-01n) is available upon request. high-speed on-chip amplifier (14 mhz, 2/3-inch ntsc b/w tv correspondence) greater than 90% quantum efficiency wide spectrum range mpp operation non-cooled types: s7986-01 one-stage te-cooled types: s7987-01 (two-stage te-cooled types are optional) high-speed uv imaging semiconductor inspection microscope 1
ccd area image sensor s7986-01, s7987-01 absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit operating temperature* 2 topr -50 - +30 c storage temperature tstg -50 - +70 c od voltage v od -0.5 - +25 v rd voltage v rd -0.5 - +18 v isv voltage v isv -0.5 - +18 v ish voltage v ish -0.5 - +18 v igv voltage v ig1v , v ig2v -10 - +15 v igh voltage v ig1h , v ig2h -10 - +15 v sg voltage v sg -10 - +15 v og voltage v og -10 - +15 v rg voltage v rg -10 - +15 v tg voltage v tg -10 - +15 v vertical clock voltage (image area) v p1vi , v p2vi -10 - +15 v vertical clock voltage (storage area) v p1vs , v p2vs -10 - +15 v horizontal clock voltage v p1h , v p2h -10 - +15 v *2: chip temperature operating conditions (mpp mode, ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od 12 15 18 v reset drain voltage v rd 11.5 12 12.5 v output gate voltage v og 1 3 5 v substrate voltage v ss - 0 - v vertical input source v isv - v rd - v horizontal input source v ish - v rd - v vertical input gate v ig1v , v ig2v -9 -8 - v test point horizontal input gate v ig1h , v ig2h -9 -8 - v high v p1vih , v p2vih 4 6 8 vertical shift register clock voltage (image area) low v p1vil , v p2vil -9 -8 -7 v high v p1vsh , v p2vsh 4 6 8 vertical shift register clock voltage (storage area) low v p1vsl , v p2vsl -9 -8 -7 v high v p1hh , v p2hh 4 6 8 horizontal shift register clock voltage low v p1hl , v p2hl -9 -8 -7 v high v sgh 4 6 8 summing gate voltage low v sgl -9 -8 -7 v high v rgh 4 6 8 reset gate voltage low v rgl -9 -8 -7 v high v tgh 4 6 8 transfer gate voltage low v tgl -9 -8 -7 v external load resistance r l 2.0 2.2 2.4 k ? electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit signal output frequency fc - 1 14 mhz vertical shift register capacitance (image area) c p1vi c p2vi - 3000 - pf vertical shift register capacitance (storage area) c p1vs c p2vs - 3000 - pf horizontal shift register capacitance c p1h , c p2h - 90 - pf summing gate capacitance c sg - 30 - pf reset gate capacitance c rg - 30 - pf charge transfer gate capacitance c tg - 70 - pf transfer efficiency* 3 cte 0.99995 0.99999 - - dc output level vout - 8 - v output impedance zo - 500 - ? power consumption* 4 p - 60 - mw *3: charge transfer efficiency per pixel, measured at half of the full well capacity. *4: power consumption of the on-chip amplifier plus load resistance 2
ccd area image sensor s7986-01, s7987-01 quantum efficiency (%) wavelength (nm) (typ. ta=25 ?c) 0 200 400 600 800 1000 1200 10 20 30 40 50 60 70 80 90 100 front-illuminated ccd front-illuminated ccd (uv coated) back-thinned ccd kmpdb0058eb spectral response (without window)* 12 0 10 100 200 wavelength (nm) transmittance (%) 300 400 500 600 700 800 900 1000 20 30 40 50 60 70 80 90 100 (typ. ta=25 ? c) sapphire kmpdb0101eb spectral transmittance characteristic of window material electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol min. typ. max. unit saturation output voltage vsat - fw sv - v vertical 30 65 - full well capacity horizontal fw 60 130 - ke - ccd node sensitivity sv 1.5 2.0 - v/e - 25 c - 50 500 dark current* 5 (mpp mode) 0 c ds - 5 50 e - /pixel/s readout noise* 6 nr - 150 300 e - rms dynamic range (area scanning)* 7 dr 200 430 - - photo response non-uniformity* 8 prnu - - 10 % spectral response range - 200 to 1100 - nm white spots - - 0 - point defect* 9 black spots - - 10 - cluster defect* 10 - - 3 - blemish column defect* 11 - - - 0 - *5: dark current nearly doubles for every 5 to 7 c increase in temperature. *6: -50 c, operating frequency is 12 mhz. *7: dynamic range (dr) = full well/readout noise *8: measured at one-half of the saturation output (full well capacity) using led light (peak emission wavelength: 660 nm) *9: white spots pixels whose dark current is higher than 1 ke - after one-second integration at 0 c black spots pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing one-half of the saturation charge) *10: 2 to 9 contiguous defective pixels *11: 10 or more contiguous defective pixels 3 fixed pattern noise (peak to peak) signal 100 photo response non-uniformity (prnu) (%) = *14: spectral response with sapphire is decreased according to the spectral transmittance characteristic of window material.
ccd area image sensor s7986-01, s7987-01 4 window material type no. window material s7986-01 s7987-01 sapphire* 13 (option: window-less) *13: hermetic sealing dark current vs. temperature temperature ( ? c) dark current (e - /pixel/s) -50 -40 -30 -20 0 -10 10 20 30 0.01 1 0.1 10 100 (typ.) kmpdb0306ea kmpdc0098ea device structure (conceptual drawing of top view) 10-bevel 490 image pixels 500 storage pixels 4 blank pixels thinning thinning 1 23 4 5 ... ... ... 2 3 4 5 490 658 22-bevel 658 signal out 1 3 1 4 2 1 2 2 2 0 1 5 1 2 1 1 10 9 8 5 4 2 1 24 3
ccd area image sensor s7986-01, s7987-01 kmpdc0099eb timing chart (2-line binning tv rate operation) parameter symbol min. typ. max. unit pulse width tpwv 1 - - s p1vi, p2vi, p1vs, p2vs, tg* 14 rise and fall times tprv, tpfv 20 - - ns pulse width tpwh 35 - - ns rise and fall times tprh, tpfh 10 - - ns p1h, p2h* 14 duty ratio - - 50 - % pulse width tpws 35 - - ns rise and fall times tprs, tpfs 10 - - ns sg duty ratio - - 50 - % pulse width tpwr 15 - - ns rg rise and fall times tprr, tpfr 5 - - ns tg - p1h overlap time tovr 3 - - s *14: symmetrical clock pulses should be overlapped at 50% of maximum amplitude. p1vi p2vi p1vs p2vs, tg p1h p2h, sg rg os p2vs, tg p1h p2h, sg rg os shutter has to be closed ( vertical transfer ) tpwv shutter has to be open. tpwr d1 d2 d3 to v r tpwh, tpws enlarged view 1234 5
ccd area image sensor s7986-01, s7987-01 kmpda0104eb dimensional outlines (unit: mm) 3.0 photosensitive surface 4.0 0.44 2.4 0.15 4.8 0.49 3.4 0.44 window 12.0* 22.9 0.3 22.4 0.3 active area 6.860 9.212 12.0* 44.0 0.44 2.54 0.13 1st pin index mark (24 ) o 0.5 0.05 1 24 12 13 index mark * size of window that guarantees the transmittance in the ? spectral transmittance characteristics of window material ? graph. (24 ) o 0.5 0.05 6.9 0.63 1.0 3.0 6.3 0.63 4.8 0.15 photosensitive surface 7.7 0.68 1st pin index mark 9.212 4.0 19.0 22.4 0.3 22.9 0.3 44.0 0.44 52.0 60.0 0.3 2.54 0.13 window 12.0 * active area 6.860 12.0* 1 24 12 13 index mark * size of window that guarantees the transmittance in the ? spectral transmittance characteristics of window material ? graph. kmpda0103eb s7986-01 s7987-01 pin connections s7986-01 s7987-01 pin no. symbol function symbol function remark (standard operation) 1 rd reset drain rd reset drain +12 v 2 os output transistor source os output transistor source r l =2.2 k ? 3 od output transistor drain od output transistor drain +15 v 4 og output gate og output gate +3 v 5 sg summing gate sg summing gate same timing as p2h 6 - - 7 - - 8 p2h ccd horizontal register clock-2 p2h ccd horizontal register clock-2 9 p1h ccd horizontal register clock-1 p1h ccd horizontal register clock-1 10 ig2h test point (horizontal input gate-2) ig2h test point (horizontal input gate-2) -8 v 11 ig1h test point (horizontal input gate-1) ig1h test point (horizontal input gate-1) -8 v 12 ish test point (horizontal input source) ish test point (horizontal input source) shorted to rd 13 tg transfer gate tg transfer gate same timing as p2vs* 15 14 p2vs ccd vertical register clock-2 (storage area) p2vs ccd vertical register clock-2 (storage area) 15 p1vs ccd vertical register clock-1 (storage area) p1vs ccd vertical register clock-1 (storage area) 16 - th1 thermistor 17 - th2 thermistor 18 - p- te-cooler- 19 - p+ te-cooler+ 20 ss substrate (gnd) ss substrate (gnd) gnd 21 p2vi ccd vertical register clock-2 (image area) p2vi ccd vertical register clock-2 (image area) 22 p1vi ccd vertical register clock-1 (image area) p1vi ccd vertical register clock-1 (image area) 23 - - 24 rg reset gate rg reset gate *15: tg is an isolation gate between vertical register and horizontal resister. in standard operation, the same pulse of p2vs should be applied to the tg. 6
ccd area image sensor s7986-01, s7987-01 specifications of built-in temperature sensor (s7987-01) a chip thermistor is built in the same package with a ccd chip, and the ccd chip temperature can be monitored with it. a relation between the thermistor resistance and absolute temperature is expressed by the following equation. r t1 = r t2 exp b t1/t2 (1/t1 - 1/t2) r t1 : resistance at absolute temperature t1 [k] r t2 : resistance at absolute temperature t2 [k] b t1/t2 : b constant [k] the characteristics of the thermistor used are as follows. r 298 =10 k ? b 298/323 =3450 k (typ. ta=25 ? c) 10 k ? 220 240 260 temperature (k) resistance 280 300 100 k ? 1 m ? kmpdb0111ea 0 1 2 3 voltage (v) ccd temperature ( ? c) 4 7 6 5 -40 -30 4 3 2 current (a) 1 0 -20 -10 0 10 20 30 (typ. ta=25 ? c) voltage vs. current ccd temperature vs. current kmpdb0179ea 7 specifications of built-in te-cooler (typ.) parameter symbol condition value unit internal resistance rint ta=25 c 1.2 ? maximum current* 16 imax tc* 17 =th* 18 =25 c 3.0 a maximum voltage vmax tc* 17 =th* 18 =25 c 3.6 v maximum heat absorption* 19 qmax 5.1 w maximum temperature of hot side - 70 c *16: if the current is greater than imax, the heat absorption begins to decrease due to the joule heat. it should be noted that this value is not a damage threshold. to protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *17: temperature of cooling side of thermoelectric cooler *18: temperature of heat radiating side of thermoelectric cooler *19: this is a heat absorption when the maximum current is supplied to the te-cooler.
ccd area image sensor s7986-01, s7987-01 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(x)" which means tentative specifications or a suffix "(z)" which means developmental specifications. ?2009 hamamatsu photonics k.k. precaution for use (electrostatic countermeasures) handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to dischar ge. ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs. element cooling/heating temperature gradient rate when using an external cooler, the element cooling/heating temperature gradient rate should be set at less than 5 k/min. cat. no. kmpd1035e07 dec. 2009 dn 8
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